Flash memory gets its name due to its microchip arrangement in such a way, that its section of memory cells gets erased in a single action or “Flash”.
Both NOR and NAND Flash memory were invented by Dr. Fujio Masuoka from Toshiba in 1984.The name ‘Flash’ was suggested because the erasure process of the memory contents reminds a flash of a camera, and it’s name was coined to express how much faster it could be erased “in a flash”. Dr. Masuoka presented the invention at the International Electron Devices Meeting (IEDM) held in San Jose, California in 1984 and Intel recognizes the potentiality of the invention and introduced the first commercial NOR type flash chip in 1988, with long erase and write times.
Flash memory is a form of non-volatile memory that can be electrically erased and rewrite, which means that it does not need power to maintain the data stored in the chip. In addition, flash memory offers fast read access times and better shock resistance than hard disks. These characteristics explain the popularity of flash memory for applications such as storage on battery-powered devices.
Flash memory is advance...
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